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t o - 2 2 0 a b BT138-600E 4q triac 30 august 2013 product data sheet scan or click this qr code to view the latest information for this product 1. general description planar passivated sensitive gate four quadrant triac in a sot78 (to-220ab) plastic package intended for use in general purpose bidirectional switching and phase control applications. this sensitive gate "series e" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. features and benefits ? direct triggering from low power drivers and logic ics ? high blocking voltage capability ? planar passivated for voltage ruggedness and reliability ? sensitive gate ? triggering in all four quadrants 3. applications ? general purpose motor control ? general purpose switching 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v drm repetitive peak off- state voltage - - 600 v i tsm non-repetitive peak on- state current full sine wave; t j(init) = 25 c; t p = 20 ms; fig. 4 ; fig. 5 - - 95 a t j junction temperature - - 125 c i t(rms) rms on-state current full sine wave; t mb 99 c; fig. 1 ; fig. 2 ; fig. 3 - - 12 a static characteristics v d = 12 v; i t = 0.1 a; t2+ g+; t j = 25 c; fig. 7 - 2.5 10 ma i gt gate trigger current v d = 12 v; i t = 0.1 a; t2+ g-; t j = 25 c; fig. 7 - 4 10 ma
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 2 / 13 symbol parameter conditions min typ max unit v d = 12 v; i t = 0.1 a; t2- g-; t j = 25 c; fig. 7 - 5 10 ma v d = 12 v; i t = 0.1 a; t2- g+; t j = 25 c; fig. 7 - 11 25 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v dm = 402 v; t j = 125 c; (v dm = 67% of v drm ); exponential waveform; gate open circuit - 150 - v/s 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 t1 main terminal 1 2 t2 main terminal 2 3 g gate mb t2 mounting base; main terminal 2 1 2 m b 3 to-220ab (sot78) s y m 0 5 1 t 1 g t 2 6. ordering information table 3. ordering information package type number name description version BT138-600E to-220ab plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 BT138-600E/dg to-220ab plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 7. marking table 4. marking codes type number marking code BT138-600E BT138-600E/dg BT138-600Edg
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 3 / 13 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage - 600 v i t(rms) rms on-state current full sine wave; t mb 99 c; fig. 1 ; fig. 2 ; fig. 3 - 12 a full sine wave; t j(init) = 25 c; t p = 20 ms; fig. 4 ; fig. 5 - 95 a i tsm non-repetitive peak on-state current full sine wave; t j(init) = 25 c; t p = 16.7 ms - 105 a i 2 t i 2 t for fusing t p = 10 ms; sine-wave pulse - 45 a 2 s i t = 20 a; i g = 0.2 a; di g /dt = 0.2 a/s; t2+ g+ - 50 a/s i t = 20 a; i g = 0.2 a; di g /dt = 0.2 a/s; t2+ g- - 50 a/s i t = 20 a; i g = 0.2 a; di g /dt = 0.2 a/s; t2- g- - 50 a/s di t /dt rate of rise of on-state current i t = 20 a; i g = 0.2 a; di g /dt = 0.2 a/s; t2- g+ - 10 a/s i gm peak gate current - 2 a p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 c t j junction temperature - 125 c
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 4 / 13 t m b (c) -50 150 100 0 5 0 003aaj938 6 9 3 1 2 1 5 i t(rms) (a) 0 99 c fig. 1. rms on-state current as a function of mounting base temperature; maximum values 0 1 0 2 0 3 0 4 0 5 0 surge duration (s) 1 0 - 2 1 0 1 1 0 - 1 003aaj940 i t(rms) (a) f = 50 hz; t mb = 99 c fig. 2. rms on-state current as a function of surge duration; maximum values 003aaj942 8 1 2 4 1 6 2 0 p tot (w) 0 i t(rms) (a) 0 1 5 1 2 6 9 3 conduction angle (degrees) form factor a 3 0 6 0 9 0 120 180 4 2.8 2.2 1.9 1.57 t mb(max) (c) 120 9 0 6 0 3 0 = 180 125 1 1 9 1 1 3 107 101 9 5 = conduction angle a = form factor = i t(rms) / i t(av) fig. 3. total power dissipation as a function of rms on-state current; maximum values
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 5 / 13 003aaj944 0 2 0 4 0 6 0 8 0 100 1 1 0 1 0 2 1 0 3 number of cycles (n) i t s m ( a ) i tsm t i t t j(init) = 2 5 c max 1/f f = 50 hz fig. 4. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aaj945 10 10 2 10 3 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 t p (s) i t s m (a) i tsm t i t t j(init) = 25 c max t p (1) (2) t p 20 ms (1) di t /dt limit (2) t2- g+ quadrant limit fig. 5. non-repetitive peak on-state current as a function of pulse width; maximum values
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 6 / 13 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit full cycle; fig. 6 - - 1.5 k/w r th(j-mb) thermal resistance from junction to mounting base half cycle; fig. 6 - - 2 k/w r th(j-a) thermal resistance from junction to ambient in free air - 60 - k/w 003aaj343 1 0 - 1 1 0 - 2 1 1 0 z th(j-mb) (k/w) 1 0 - 3 t p (s) 1 0 - 5 1 1 0 1 0 - 1 1 0 - 2 1 0 - 4 1 0 - 3 t p p d t (1) (2) (1) unidirectional (half cycle) (2) bidirectional (full cycle) fig. 6. transient thermal impedance from junction to mounting base as a function of pulse duration
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 7 / 13 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v d = 12 v; i t = 0.1 a; t2+ g+; t j = 25 c; fig. 7 - 2.5 10 ma v d = 12 v; i t = 0.1 a; t2+ g-; t j = 25 c; fig. 7 - 4 10 ma v d = 12 v; i t = 0.1 a; t2- g-; t j = 25 c; fig. 7 - 5 10 ma i gt gate trigger current v d = 12 v; i t = 0.1 a; t2- g+; t j = 25 c; fig. 7 - 11 25 ma v d = 12 v; i g = 0.1 a; t2+ g+; t j = 25 c; fig. 8 - - 30 ma v d = 12 v; i g = 0.1 a; t2+ g-; t j = 25 c; fig. 8 - - 40 ma v d = 12 v; i g = 0.1 a; t2- g-; t j = 25 c; fig. 8 - - 30 ma i l latching current v d = 12 v; i g = 0.1 a; t2- g+; t j = 25 c; fig. 8 - - 40 ma i h holding current v d = 12 v; t j = 25 c; fig. 9 - - 30 ma v t on-state voltage i t = 15 a; t j = 25 c; fig. 10 - 1.4 1.65 v v d = 12 v; i t = 0.1 a; t j = 25 c; fig. 11 - 0.7 1 v v gt gate trigger voltage v d = 400 v; i t = 0.1 a; t j = 125 c; fig. 11 0.25 0.4 - v i d off-state current v d = 600 v; t j = 125 c - 0.1 0.5 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v dm = 402 v; t j = 125 c; (v dm = 67% of v drm ); exponential waveform; gate open circuit - 150 - v/s t gt gate-controlled turn-on time i tm = 16 a; v d = 600 v; i g = 0.1 a; di g / dt = 5 a/s - 2 - s
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 8 / 13 t j (c) -50 150 100 0 5 0 003aaj946 1 2 3 0 i g t i g t(25c) (1) (2) (3) (4) (1) (2) (3) (4) (1) t2- g+ (2) t2- g- (3) t2+ g- (4) t2+ g+ fig. 7. normalized gate trigger current as a function of junction temperature t j (c) -50 150 100 0 5 0 003aaj947 1 2 3 0 i l i l(25c) fig. 8. normalized latching current as a function of junction temperature t j (c) -50 150 100 0 5 0 003aaj948 1 2 3 0 i h i h(25c) fig. 9. normalized holding current as a function of junction temperature 0 1 0 2 0 3 0 4 0 0 1 2 v t (v) i t ( a ) ( 1 ) ( 3 ) 0.5 1.5 2.5 003aaj949 ( 2 ) v o = 1.175 v; r s = 0.0316 ? (1) t j = 125 c; typical values (2) t j = 125 c; maximum values (3) t j = 25 c; maximum values fig. 10. on-state current as a function of on-state voltage
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 9 / 13 t j (c) -50 150 100 0 5 0 003aaj950 0.8 1.2 1.6 0.4 v g t v gt(25c) fig. 11. normalized gate trigger voltage as a function of junction temperature
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 10 / 13 11. package outline r e f e r e n c e s o u t l i n e v e r s i o n e u r o p e a n p r o j e c t i o n i s s u e d a t e i e c j e d e c j e i t a s o t 7 8 s c - 4 6 3 - l e a d t o - 2 2 0 a b s o t 7 8 0 8 - 0 4 - 2 3 0 8 - 0 6 - 1 3 n o t e s 1 . l e a d s h o u l d e r d e s i g n s m a y v a r y . 2 . d i m e n s i o n i n c l u d e s e x c e s s d a m b a r . u n i t a m m 4 . 7 4 . 1 1 . 4 0 1 . 2 5 0 . 9 0 . 6 0 . 7 0 . 4 1 6 . 0 1 5 . 2 6 . 6 5 . 9 1 0 . 3 9 . 7 1 5 . 0 1 2 . 8 3 . 3 0 2 . 7 9 3 . 8 3 . 5 a 1 d i m e n s i o n s ( m m a r e t h e o r i g i n a l d i m e n s i o n s ) p l a s t i c s i n g l e - e n d e d p a c k a g e ; h e a t s i n k m o u n t e d ; 1 m o u n t i n g h o l e ; 3 - l e a d t o - 2 2 0 a b 0 5 1 0 m m s c a l e b b 1 ( 2 ) 1 . 6 1 . 0 c d 1 . 3 1 . 0 b 2 ( 2 ) d 1 e e 2 . 5 4 l l 1 ( 1 ) l 2 ( 1 ) m a x . 3 . 0 p q 3 . 0 2 . 7 q 2 . 6 2 . 2 d d 1 q p l 1 2 3 l 1 ( 1 ) b 1 ( 2 ) ( 3 ) b 2 ( 2 ) ( 2 ) e e b ( 3 ) a e a 1 c q l 2 ( 1 ) m o u n t i n g b a s e fig. 12. package outline to-220ab (sot78)
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 11 / 13 12. legal information 12.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors BT138-600E 4q triac BT138-600E all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 30 august 2013 13 / 13 13. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp n.v. 2013. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 30 august 2013

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